Atomic Layer Deposition Process Helps Solar Cells -Lithium - Ion Battery Equipment
Spanish researchers have developed an n-type crystalline silicon solar cell based on vanadium oxide thin films deposited by atomic layer deposition. The open circuit voltage of the battery is 631mV, and the short circuit current is 38.36mAcm- ²， The filling factor was 75.8%.
In the researcher University ä t University Polit è cnica Catalonia (UPC) has vanadium oxide (V made crystalline silicon solar cell 2 ö 5) as hole selective film in Spain.
The novelty of their method is to use atomic layer deposition (ALD) instead of thermal evaporation to deposit films. When the manufacturing process for building V2O5 crystal photovoltaic devices reaches industrial scale, the former is said to have potential scalability problems, because it requires the addition of plasma enhanced chemical vapor deposition (PECVD) passivation layer.
"The atomic layer deposition (ALD) process provides a soft and low temperature deposition technology compatible with solar cell manufacturing, and it allows conformal deposition of films. Compared with the thermal evaporation process, it has a higher degree of scalability for industrial production," explained the Spanish Group. "In addition, the excellent surface passivation provided by vanadium oxide film on silicon substrate has potential advantages, which can overcome the need to use amorphous silicon film as passivation interlayer, thereby eliminating manufacturing steps and reducing the overall cost."(Lithium - Ion Battery Equipment)
The solar cell is composed of high-quality floating area n-type c-Si chips and 4nm thick V2O5 layers. The deposition process was carried out at 125 ° C and the vanadium precursor was heated to 58 ° C. The 70nm thick indium tin oxide (ITO) thin film is deposited by RF magnetron sputtering, which is a high-speed vacuum coating technology, and can deposit a variety of materials, including metals and ceramics. Then the silver layer with thickness of 200 nm was evaporated on ITO film.
The power conversion efficiency of the solar cell is 18.6%, the open circuit voltage is 631mV, the short circuit current is 38.36mAcm-2, and the filling factor is 75.8%. The scientists emphasized that: "Solar cells have achieved remarkable performance parameters without amorphous silicon passivation, and the efficiency is up to about 19%." "Technological improvements in battery manufacturing, such as better electrical quality of ITO layers and/or thicker silver grids, can improve current efficiency."
The equipment was published in the paper "Atomic Layer Deposition of Vanadium Oxide Thin Films for Crystal Silicon Solar Cells" published on MaterialAdvances.
In the researcher University ä t University Polit è cnica Catalonia (UPC) has vanadium oxide (V made crystalline silicon solar cell 2 ö 5) as hole selective film in Spain.
The novelty of their method is to use atomic layer deposition (ALD) instead of thermal evaporation to deposit films. When the manufacturing process for building V2O5 crystal photovoltaic devices reaches industrial scale, the former is said to have potential scalability problems, because it requires the addition of plasma enhanced chemical vapor deposition (PECVD) passivation layer.
"The atomic layer deposition (ALD) process provides a soft and low temperature deposition technology compatible with solar cell manufacturing, and it allows conformal deposition of films. Compared with the thermal evaporation process, it has a higher degree of scalability for industrial production," explained the Spanish Group. "In addition, the excellent surface passivation provided by vanadium oxide film on silicon substrate has potential advantages, which can overcome the need to use amorphous silicon film as passivation interlayer, thereby eliminating manufacturing steps and reducing the overall cost."(Lithium - Ion Battery Equipment)
The solar cell is composed of high-quality floating area n-type c-Si chips and 4nm thick V2O5 layers. The deposition process was carried out at 125 ° C and the vanadium precursor was heated to 58 ° C. The 70nm thick indium tin oxide (ITO) thin film is deposited by RF magnetron sputtering, which is a high-speed vacuum coating technology, and can deposit a variety of materials, including metals and ceramics. Then the silver layer with thickness of 200 nm was evaporated on ITO film.
The power conversion efficiency of the solar cell is 18.6%, the open circuit voltage is 631mV, the short circuit current is 38.36mAcm-2, and the filling factor is 75.8%. The scientists emphasized that: "Solar cells have achieved remarkable performance parameters without amorphous silicon passivation, and the efficiency is up to about 19%." "Technological improvements in battery manufacturing, such as better electrical quality of ITO layers and/or thicker silver grids, can improve current efficiency."
The equipment was published in the paper "Atomic Layer Deposition of Vanadium Oxide Thin Films for Crystal Silicon Solar Cells" published on MaterialAdvances.
